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| author |  Peter McGoron
| 2024-12-27 23:30:39 -0500 |
|---|---|---|
| committer | Peter McGoron
| 2024-12-27 23:30:39 -0500 |
| commit | 4981e4e527a4f05a64a000142201a99adfee7fbd (patch) | |
| tree | 65be1155208111a590c1743523b4d1c245c672fa /test/10.1038_s41467-022-34369-4-citation.ris | |
| parent | README (diff) | |
chicken egg
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| -rw-r--r-- | test/10.1038_s41467-022-34369-4-citation.ris | 33 |
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diff --git a/test/10.1038_s41467-022-34369-4-citation.ris b/test/10.1038_s41467-022-34369-4-citation.ris deleted file mode 100644 index 37ef355..0000000 --- a/test/10.1038_s41467-022-34369-4-citation.ris +++ /dev/null @@ -1,33 +0,0 @@ -TY - JOUR -AU - Prudkovskiy, Vladimir S. -AU - Hu, Yiran -AU - Zhang, Kaimin -AU - Hu, Yue -AU - Ji, Peixuan -AU - Nunn, Grant -AU - Zhao, Jian -AU - Shi, Chenqian -AU - Tejeda, Antonio -AU - Wander, David -AU - De Cecco, Alessandro -AU - Winkelmann, Clemens B. -AU - Jiang, Yuxuan -AU - Zhao, Tianhao -AU - Wakabayashi, Katsunori -AU - Jiang, Zhigang -AU - Ma, Lei -AU - Berger, Claire -AU - de Heer, Walt A. -PY - 2022 -DA - 2022/12/19 -TI - An epitaxial graphene platform for zero-energy edge state nanoelectronics -JO - Nature Communications -SP - 7814 -VL - 13 -IS - 1 -AB - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics. -SN - 2041-1723 -UR - https://doi.org/10.1038/s41467-022-34369-4 -DO - 10.1038/s41467-022-34369-4 -ID - Prudkovskiy2022 -ER - |