diff options
| author |  Peter McGoron
| 2024-12-27 23:30:39 -0500 |
|---|---|---|
| committer | Peter McGoron
| 2024-12-27 23:30:39 -0500 |
| commit | 4981e4e527a4f05a64a000142201a99adfee7fbd (patch) | |
| tree | 65be1155208111a590c1743523b4d1c245c672fa /tests/10.1038_s41467-022-34369-4-citation.ris | |
| parent | README (diff) | |
chicken egg
Diffstat (limited to 'tests/10.1038_s41467-022-34369-4-citation.ris')
| -rw-r--r-- | tests/10.1038_s41467-022-34369-4-citation.ris | 33 |
1 files changed, 33 insertions, 0 deletions
diff --git a/tests/10.1038_s41467-022-34369-4-citation.ris b/tests/10.1038_s41467-022-34369-4-citation.ris new file mode 100644 index 0000000..37ef355 --- /dev/null +++ b/tests/10.1038_s41467-022-34369-4-citation.ris @@ -0,0 +1,33 @@ +TY - JOUR +AU - Prudkovskiy, Vladimir S. +AU - Hu, Yiran +AU - Zhang, Kaimin +AU - Hu, Yue +AU - Ji, Peixuan +AU - Nunn, Grant +AU - Zhao, Jian +AU - Shi, Chenqian +AU - Tejeda, Antonio +AU - Wander, David +AU - De Cecco, Alessandro +AU - Winkelmann, Clemens B. +AU - Jiang, Yuxuan +AU - Zhao, Tianhao +AU - Wakabayashi, Katsunori +AU - Jiang, Zhigang +AU - Ma, Lei +AU - Berger, Claire +AU - de Heer, Walt A. +PY - 2022 +DA - 2022/12/19 +TI - An epitaxial graphene platform for zero-energy edge state nanoelectronics +JO - Nature Communications +SP - 7814 +VL - 13 +IS - 1 +AB - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics. +SN - 2041-1723 +UR - https://doi.org/10.1038/s41467-022-34369-4 +DO - 10.1038/s41467-022-34369-4 +ID - Prudkovskiy2022 +ER - |