TY  - JOUR
AU  - Prudkovskiy, Vladimir S.
AU  - Hu, Yiran
AU  - Zhang, Kaimin
AU  - Hu, Yue
AU  - Ji, Peixuan
AU  - Nunn, Grant
AU  - Zhao, Jian
AU  - Shi, Chenqian
AU  - Tejeda, Antonio
AU  - Wander, David
AU  - De Cecco, Alessandro
AU  - Winkelmann, Clemens B.
AU  - Jiang, Yuxuan
AU  - Zhao, Tianhao
AU  - Wakabayashi, Katsunori
AU  - Jiang, Zhigang
AU  - Ma, Lei
AU  - Berger, Claire
AU  - de Heer, Walt A.
PY  - 2022
DA  - 2022/12/19
TI  - An epitaxial graphene platform for zero-energy edge state nanoelectronics
JO  - Nature Communications
SP  - 7814
VL  - 13
IS  - 1
AB  - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
SN  - 2041-1723
UR  - https://doi.org/10.1038/s41467-022-34369-4
DO  - 10.1038/s41467-022-34369-4
ID  - Prudkovskiy2022
ER  -