litedram/examples/sim/micron/8192Mb_ddr3_parameters.vh

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2018-11-17 03:20:34 -05:00
/****************************************************************************************
*
* Disclaimer This software code and all associated documentation, comments or other
* of Warranty: information (collectively "Software") is provided "AS IS" without
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* Copyright 2003 Micron Technology, Inc. All rights reserved.
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****************************************************************************************/
// Timing parameters based on 8Gb_DDR3L.pdf - Rev. A 4/14 EN
// SYMBOL UNITS DESCRIPTION
// ------ ----- -----------
`ifdef sg093 // sg093 is equivalent to the JEDEC DDR3-2133 (14-14-14) speed bin
parameter TCK_MIN = 938; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 50; // tJIT(per) ps Period JItter
parameter TJIT_CC = 100; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 74; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 87; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 97; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 105; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 111; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 116; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 121; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 125; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 128; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 132; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 134; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 5; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 70; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 180; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 280; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 470; // tIPW ps Control and Address input Pulse Width
parameter TIS = 35; // tIS ps Input Setup Time
parameter TIH = 75; // tIH ps Input Hold Time
parameter TRAS_MIN = 33000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 46090; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13090; // tRCD ps Active to Read/Write command time
parameter TRP = 13090; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 180; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 122; // tWLS ps Setup time for tDQS flop
parameter TWLH = 122; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13090; // TAA ps Internal READ command to first data
parameter CL_TIME = 13090; // CL ps Minimum CAS Latency
`elsif sg107 // sg107 is equivalent to the JEDEC DDR3-1866 (13-13-13) speed bin
parameter TCK_MIN = 1071; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 60; // tJIT(per) ps Period JItter
parameter TJIT_CC = 120; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 88; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 105; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 117; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 126; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 133; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 139; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 145; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 150; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 154; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 158; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 161; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 20; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 80; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 200; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 320; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 535; // tIPW ps Control and Address input Pulse Width
parameter TIS = 50; // tIS ps Input Setup Time
parameter TIH = 100; // tIH ps Input Hold Time
parameter TRAS_MIN = 34000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 47910; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13910; // tRCD ps Active to Read/Write command time
parameter TRP = 13910; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 200; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 140; // tWLS ps Setup time for tDQS flop
parameter TWLH = 140; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13910; // TAA ps Internal READ command to first data
parameter CL_TIME = 13910; // CL ps Minimum CAS Latency
`elsif sg125 // sg125 is equivalent to the JEDEC DDR3-1600 (11-11-11) speed bin
parameter TCK_MIN = 1250; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 70; // tJIT(per) ps Period JItter
parameter TJIT_CC = 140; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 103; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 122; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 136; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 147; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 155; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 163; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 169; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 175; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 180; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 184; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 188; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 10; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 45; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 100; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.27; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.18; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.18; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 225; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 360; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 560; // tIPW ps Control and Address input Pulse Width
parameter TIS = 170; // tIS ps Input Setup Time
parameter TIH = 120; // tIH ps Input Hold Time
parameter TRAS_MIN = 35000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 48750; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13750; // tRCD ps Active to Read/Write command time
parameter TRP = 13750; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5000; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 165; // tWLS ps Setup time for tDQS flop
parameter TWLH = 165; // tWLH ps Hold time of tDQS flop
parameter TWLO = 7500; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13750; // TAA ps Internal READ command to first data
parameter CL_TIME = 13750; // CL ps Minimum CAS Latency
`elsif sg15E // sg15E is equivalent to the JEDEC DDR3-1333 (9-9-9) speed bin
parameter TCK_MIN = 1500; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 80; // tJIT(per) ps Period JItter
parameter TJIT_CC = 160; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 118; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 140; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 155; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 168; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 177; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 186; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 193; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 200; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 205; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 210; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 215; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 30; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 65; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 125; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 255; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.40; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.40; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 400; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 620; // tIPW ps Control and Address input Pulse Width
parameter TIS = 190; // tIS ps Input Setup Time
parameter TIH = 140; // tIH ps Input Hold Time
parameter TRAS_MIN = 36000; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 49500; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13500; // tRCD ps Active to Read/Write command time
parameter TRP = 13500; // tRP ps Precharge command period
parameter TXP = 6000; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 250; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 195; // tWLS ps Setup time for tDQS flop
parameter TWLH = 195; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13500; // TAA ps Internal READ command to first data
parameter CL_TIME = 13500; // CL ps Minimum CAS Latency
`else
`define sg187E // sg187E is equivalent to the JEDEC DDR3-1066 (7-7-7) speed bin
parameter TCK_MIN = 1875; // tCK ps Minimum Clock Cycle Time
parameter TJIT_PER = 90; // tJIT(per) ps Period JItter
parameter TJIT_CC = 180; // tJIT(cc) ps Cycle to Cycle jitter
parameter TERR_2PER = 132; // tERR(2per) ps Accumulated Error (2-cycle)
parameter TERR_3PER = 157; // tERR(3per) ps Accumulated Error (3-cycle)
parameter TERR_4PER = 175; // tERR(4per) ps Accumulated Error (4-cycle)
parameter TERR_5PER = 188; // tERR(5per) ps Accumulated Error (5-cycle)
parameter TERR_6PER = 200; // tERR(6per) ps Accumulated Error (6-cycle)
parameter TERR_7PER = 209; // tERR(7per) ps Accumulated Error (7-cycle)
parameter TERR_8PER = 217; // tERR(8per) ps Accumulated Error (8-cycle)
parameter TERR_9PER = 224; // tERR(9per) ps Accumulated Error (9-cycle)
parameter TERR_10PER = 231; // tERR(10per)ps Accumulated Error (10-cycle)
parameter TERR_11PER = 237; // tERR(11per)ps Accumulated Error (11-cycle)
parameter TERR_12PER = 242; // tERR(12per)ps Accumulated Error (12-cycle)
parameter TDS = 75; // tDS ps DQ and DM input setup time relative to DQS
parameter TDH = 100; // tDH ps DQ and DM input hold time relative to DQS
parameter TDQSQ = 150; // tDQSQ ps DQS-DQ skew, DQS to last DQ valid, per group, per access
parameter TDQSS = 0.25; // tDQSS tCK Rising clock edge to DQS/DQS# latching transition
parameter TDSS = 0.20; // tDSS tCK DQS falling edge to CLK rising (setup time)
parameter TDSH = 0.20; // tDSH tCK DQS falling edge from CLK rising (hold time)
parameter TDQSCK = 300; // tDQSCK ps DQS output access time from CK/CK#
parameter TQSH = 0.38; // tQSH tCK DQS Output High Pulse Width
parameter TQSL = 0.38; // tQSL tCK DQS Output Low Pulse Width
parameter TDIPW = 490; // tDIPW ps DQ and DM input Pulse Width
parameter TIPW = 780; // tIPW ps Control and Address input Pulse Width
parameter TIS = 275; // tIS ps Input Setup Time
parameter TIH = 200; // tIH ps Input Hold Time
parameter TRAS_MIN = 37500; // tRAS ps Minimum Active to Precharge command time
parameter TRC = 50625; // tRC ps Active to Active/Auto Refresh command time
parameter TRCD = 13125; // tRCD ps Active to Read/Write command time
parameter TRP = 13125; // tRP ps Precharge command period
parameter TXP = 7500; // tXP ps Exit power down to a valid command
parameter TCKE = 5625; // tCKE ps CKE minimum high or low pulse width
parameter TAON = 300; // tAON ps RTT turn-on from ODTLon reference
parameter TWLS = 245; // tWLS ps Setup time for tDQS flop
parameter TWLH = 245; // tWLH ps Hold time of tDQS flop
parameter TWLO = 9000; // tWLO ps Write levelization output delay
parameter TAA_MIN = 13125; // TAA ps Internal READ command to first data
parameter CL_TIME = 13125; // CL ps Minimum CAS Latency
`endif
parameter TDQSCK_DLLDIS = TDQSCK; // tDQSCK ps for DLLDIS mode, timing not guaranteed
`ifdef x16
`ifdef sg093
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 6000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 35000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 7500; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 45000; // tFAW ps (2KB page size) Four Bank Activate window
`else // sg187E, sg187, sg25, sg25E
parameter TRRD = 10000; // tRRD ps (2KB page size) Active bank a to Active bank b command time
parameter TFAW = 50000; // tFAW ps (2KB page size) Four Bank Activate window
`endif
`else // x4, x8
`ifdef sg093
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg107
parameter TRRD = 5000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 25000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg125
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15E
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg15
parameter TRRD = 6000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 30000; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187E
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`elsif sg187
parameter TRRD = 7500; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 37500; // tFAW ps (1KB page size) Four Bank Activate window
`else // sg25, sg25E
parameter TRRD = 10000; // tRRD ps (1KB page size) Active bank a to Active bank b command time
parameter TFAW = 40000; // tFAW ps (1KB page size) Four Bank Activate window
`endif
`endif
// Timing Parameters
// Mode Register
parameter CL_MIN = 5; // CL tCK Minimum CAS Latency
parameter CL_MAX = 14; // CL tCK Maximum CAS Latency
parameter AL_MIN = 0; // AL tCK Minimum Additive Latency
parameter AL_MAX = 2; // AL tCK Maximum Additive Latency
parameter WR_MIN = 5; // WR tCK Minimum Write Recovery
parameter WR_MAX = 16; // WR tCK Maximum Write Recovery
parameter BL_MIN = 4; // BL tCK Minimum Burst Length
parameter BL_MAX = 8; // BL tCK Minimum Burst Length
parameter CWL_MIN = 5; // CWL tCK Minimum CAS Write Latency
parameter CWL_MAX = 10; // CWL tCK Maximum CAS Write Latency
// Clock
parameter TCK_MAX = 3300; // tCK ps Maximum Clock Cycle Time
parameter TCH_AVG_MIN = 0.47; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_AVG_MIN = 0.47; // tCL tCK Minimum Clock Low-Level Pulse Width
parameter TCH_AVG_MAX = 0.53; // tCH tCK Maximum Clock High-Level Pulse Width
parameter TCL_AVG_MAX = 0.53; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCH_ABS_MIN = 0.43; // tCH tCK Minimum Clock High-Level Pulse Width
parameter TCL_ABS_MIN = 0.43; // tCL tCK Maximum Clock Low-Level Pulse Width
parameter TCKE_TCK = 3; // tCKE tCK CKE minimum high or low pulse width
parameter TAA_MAX = 20000; // TAA ps Internal READ command to first data
// Data OUT
parameter TQH = 0.38; // tQH ps DQ output hold time from DQS, DQS#
// Data Strobe OUT
parameter TRPRE = 0.90; // tRPRE tCK DQS Read Preamble
parameter TRPST = 0.30; // tRPST tCK DQS Read Postamble
// Data Strobe IN
parameter TDQSH = 0.45; // tDQSH tCK DQS input High Pulse Width
parameter TDQSL = 0.45; // tDQSL tCK DQS input Low Pulse Width
parameter TWPRE = 0.90; // tWPRE tCK DQS Write Preamble
parameter TWPST = 0.30; // tWPST tCK DQS Write Postamble
// Command and Address
integer TZQCS; // tZQCS tCK ZQ Cal (Short) time
integer TZQINIT; // tZQinit tCK ZQ Cal (Long) time
integer TZQOPER; // tZQoper tCK ZQ Cal (Long) time
parameter TCCD = 4; // tCCD tCK Cas to Cas command delay
parameter TCCD_DG = 2; // tCCD_DG tCK Cas to Cas command delay to different group
parameter TRAS_MAX = 60e9; // tRAS ps Maximum Active to Precharge command time
parameter TWR = 15000; // tWR ps Write recovery time
parameter TMRD = 4; // tMRD tCK Load Mode Register command cycle time
parameter TMOD = 15000; // tMOD ps LOAD MODE to non-LOAD MODE command cycle time
parameter TMOD_TCK = 12; // tMOD tCK LOAD MODE to non-LOAD MODE command cycle time
parameter TRRD_TCK = 4; // tRRD tCK Active bank a to Active bank b command time
parameter TRRD_DG = 3000; // tRRD_DG ps Active bank a to Active bank b command time to different group
parameter TRRD_DG_TCK = 2; // tRRD_DG tCK Active bank a to Active bank b command time to different group
parameter TRTP = 7500; // tRTP ps Read to Precharge command delay
parameter TRTP_TCK = 4; // tRTP tCK Read to Precharge command delay
parameter TWTR = 7500; // tWTR ps Write to Read command delay
parameter TWTR_DG = 3750; // tWTR_DG ps Write to Read command delay to different group
parameter TWTR_TCK = 4; // tWTR tCK Write to Read command delay
parameter TWTR_DG_TCK = 2; // tWTR_DG tCK Write to Read command delay to different group
parameter TDLLK = 512; // tDLLK tCK DLL locking time
// Refresh - 4Gb
parameter TRFC_MIN = 260000; // tRFC ps Refresh to Refresh Command interval minimum value
parameter TRFC_MAX =70200000; // tRFC ps Refresh to Refresh Command Interval maximum value
// Power Down
parameter TXP_TCK = 3; // tXP tCK Exit power down to a valid command
parameter TXPDLL = 24000; // tXPDLL ps Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TXPDLL_TCK = 10; // tXPDLL tCK Exit precharge power down to READ or WRITE command (DLL-off mode)
parameter TACTPDEN = 1; // tACTPDEN tCK Timing of last ACT command to power down entry
parameter TPRPDEN = 1; // tPREPDEN tCK Timing of last PRE command to power down entry
parameter TREFPDEN = 1; // tARPDEN tCK Timing of last REFRESH command to power down entry
parameter TCPDED = 1; // tCPDED tCK Command pass disable/enable delay
parameter TPD_MAX =TRFC_MAX; // tPD ps Power-down entry-to-exit timing
parameter TXPR = 270000; // tXPR ps Exit Reset from CKE assertion to a valid command
parameter TXPR_TCK = 5; // tXPR tCK Exit Reset from CKE assertion to a valid command
// Self Refresh
parameter TXS = 270000; // tXS ps Exit self refesh to a non-read or write command
parameter TXS_TCK = 5; // tXS tCK Exit self refesh to a non-read or write command
parameter TXSDLL = TDLLK; // tXSRD tCK Exit self refresh to a read or write command
parameter TISXR = TIS; // tISXR ps CKE setup time during self refresh exit.
parameter TCKSRE = 10000; // tCKSRE ps Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRE_TCK = 5; // tCKSRE tCK Valid Clock requirement after self refresh entry (SRE)
parameter TCKSRX = 10000; // tCKSRX ps Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKSRX_TCK = 5; // tCKSRX tCK Valid Clock requirement prior to self refresh exit (SRX)
parameter TCKESR_TCK = 4; // tCKESR tCK Minimum CKE low width for Self Refresh entry to exit timing
// ODT
parameter TAOF = 0.7; // tAOF tCK RTT turn-off from ODTLoff reference
parameter TAONPD = 8500; // tAONPD ps Asynchronous RTT turn-on delay (Power-Down with DLL frozen)
parameter TAOFPD = 8500; // tAONPD ps Asynchronous RTT turn-off delay (Power-Down with DLL frozen)
parameter ODTH4 = 4; // ODTH4 tCK ODT minimum HIGH time after ODT assertion or write (BL4)
parameter ODTH8 = 6; // ODTH8 tCK ODT minimum HIGH time after write (BL8)
parameter TADC = 0.7; // tADC tCK RTT dynamic change skew
// Write Levelization
parameter TWLMRD = 40; // tWLMRD tCK First DQS pulse rising edge after tDQSS margining mode is programmed
parameter TWLDQSEN = 25; // tWLDQSEN tCK DQS/DQS delay after tDQSS margining mode is programmed
parameter TWLOE = 2000; // tWLOE ps Write levelization output error
// Size Parameters based on Part Width
`ifdef x4
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 16; // MAX Address Bits
parameter ROW_BITS = 16; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 14; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 4; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`define CA14PLUS
`elsif x8
parameter DM_BITS = 1; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 16; // MAX Address Bits
parameter ROW_BITS = 16; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 11; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 8; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 1; // Set this parameter to control how many Dqs bits are used
`else
`define x16
parameter DM_BITS = 2; // Set this parameter to control how many Data Mask bits are used
parameter ADDR_BITS = 16; // MAX Address Bits
parameter ROW_BITS = 16; // Set this parameter to control how many Address bits are used
parameter COL_BITS = 10; // Set this parameter to control how many Column bits are used
parameter DQ_BITS = 16; // Set this parameter to control how many Data bits are used **Same as part bit width**
parameter DQS_BITS = 2; // Set this parameter to control how many Dqs bits are used
`endif
// Size Parameters
parameter BA_BITS = 3; // Set this parmaeter to control how many Bank Address bits are used
parameter MEM_BITS = 10; // Set this parameter to control how many write data bursts can be stored in memory. The default is 2^10=1024.
parameter AP = 10; // the address bit that controls auto-precharge and precharge-all
parameter BC = 12; // the address bit that controls burst chop
parameter BL_BITS = 3; // the number of bits required to count to BL_MAX
parameter BO_BITS = 2; // the number of Burst Order Bits
`ifdef QUAD_RANK
parameter CS_BITS = 4; // Number of Chip Select Bits
parameter RANKS = 4; // Number of Chip Selects
`elsif DUAL_RANK
parameter CS_BITS = 2; // Number of Chip Select Bits
parameter RANKS = 2; // Number of Chip Selects
`else
parameter CS_BITS = 1; // Number of Chip Select Bits
parameter RANKS = 1; // Number of Chip Selects
`endif
// Simulation parameters
parameter RZQ = 240; // termination resistance
parameter PRE_DEF_PAT = 8'hAA; // value returned during mpr pre-defined pattern readout
parameter STOP_ON_ERROR = 1; // If set to 1, the model will halt on command sequence/major errors
parameter DEBUG = 1; // Turn on Debug messages
parameter BUS_DELAY = 0; // delay in nanoseconds
parameter RANDOM_OUT_DELAY = 0; // If set to 1, the model will put a random amount of delay on DQ/DQS during reads
parameter RANDOM_SEED = 31913; //seed value for random generator.
parameter RDQSEN_PRE = 2; // DQS driving time prior to first read strobe
parameter RDQSEN_PST = 1; // DQS driving time after last read strobe
parameter RDQS_PRE = 2; // DQS low time prior to first read strobe
parameter RDQS_PST = 1; // DQS low time after last read strobe
parameter RDQEN_PRE = 0; // DQ/DM driving time prior to first read data
parameter RDQEN_PST = 0; // DQ/DM driving time after last read data
parameter WDQS_PRE = 2; // DQS half clock periods prior to first write strobe
parameter WDQS_PST = 1; // DQS half clock periods after last write strobe
// check for legal cas latency based on the cas write latency
function valid_cl;
input [3:0] cl;
input [3:0] cwl;
case ({cwl, cl})
`ifdef sg093
{4'd5 , 4'd5 },
{4'd5 , 4'd6 },
{4'd6 , 4'd7 },
{4'd6 , 4'd8 },
{4'd7 , 4'd9 },
{4'd7 , 4'd10},
{4'd8 , 4'd11},
{4'd9 , 4'd13},
{4'd10, 4'd14}: valid_cl = 1;
`elsif sg107
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11},
{4'd9, 4'd13}: valid_cl = 1;
`elsif sg125
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10},
{4'd8, 4'd11}: valid_cl = 1;
`elsif sg15E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 },
{4'd7, 4'd9 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg15
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 },
{4'd7, 4'd10}: valid_cl = 1;
`elsif sg187E
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd7 },
{4'd6, 4'd8 }: valid_cl = 1;
`elsif sg187
{4'd5, 4'd5 },
{4'd5, 4'd6 },
{4'd6, 4'd8 }: valid_cl = 1;
`endif
default : valid_cl = 0;
endcase
endfunction
// find the minimum valid cas write latency
function [3:0] min_cwl;
input period;
real period;
min_cwl = (period >= 2500.0) ? 5:
(period >= 1875.0) ? 6:
(period >= 1500.0) ? 7:
(period >= 1250.0) ? 8:
(period >= 1071.0) ? 9:
10; // (period >= 938)
endfunction
// find the minimum valid cas latency
function [3:0] min_cl;
input period;
real period;
reg [3:0] cwl;
reg [3:0] cl;
begin
cwl = min_cwl(period);
for (cl=CL_MAX; cl>=CL_MIN; cl=cl-1) begin
if (valid_cl(cl, cwl)) begin
min_cl = cl;
end
end
end
endfunction