chicken egg

2 files changed, 0 insertions, 98 deletions

diff --git a/test/10.1038_s41467-022-34369-4-citation.ris b/test/10.1038_s41467-022-34369-4-citation.ris
deleted file mode 100644
index 37ef355..0000000
--- a/test/10.1038_s41467-022-34369-4-citation.ris
+++ /dev/null
@@ -1,33 +0,0 @@
-TY  - JOUR
-AU  - Prudkovskiy, Vladimir S.
-AU  - Hu, Yiran
-AU  - Zhang, Kaimin
-AU  - Hu, Yue
-AU  - Ji, Peixuan
-AU  - Nunn, Grant
-AU  - Zhao, Jian
-AU  - Shi, Chenqian
-AU  - Tejeda, Antonio
-AU  - Wander, David
-AU  - De Cecco, Alessandro
-AU  - Winkelmann, Clemens B.
-AU  - Jiang, Yuxuan
-AU  - Zhao, Tianhao
-AU  - Wakabayashi, Katsunori
-AU  - Jiang, Zhigang
-AU  - Ma, Lei
-AU  - Berger, Claire
-AU  - de Heer, Walt A.
-PY  - 2022
-DA  - 2022/12/19
-TI  - An epitaxial graphene platform for zero-energy edge state nanoelectronics
-JO  - Nature Communications
-SP  - 7814
-VL  - 13
-IS  - 1
-AB  - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
-SN  - 2041-1723
-UR  - https://doi.org/10.1038/s41467-022-34369-4
-DO  - 10.1038/s41467-022-34369-4
-ID  - Prudkovskiy2022
-ER  - 
diff --git a/test/test.scm b/test/test.scm
deleted file mode 100644
index 2b7441a..0000000
--- a/test/test.scm
+++ /dev/null
@@ -1,65 +0,0 @@
-#| Copyright 2024 Peter McGoron
- |
- | Licensed under the Apache License, Version 2.0 (the "License");
- |
- | you may not use this file except in compliance with the License.
- | You may obtain a copy of the License at
- |
- |     http://www.apache.org/licenses/LICENSE-2.0
- |
- | Unless required by applicable law or agreed to in writing, software
- | distributed under the License is distributed on an "AS IS" BASIS,
- | WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.
- | See the License for the specific language governing permissions and
- | limitations under the License.
- |#
-
-(import r7rs)
-(load "../mcgoron.ris.sld")
-(import (mcgoron ris) test (srfi 146) (srfi 214))
-
-(define file
-  (call-with-input-file "10.1038_s41467-022-34369-4-citation.ris" ris->mapping))
-
-(test-begin "10.1038_s41467-022-34369-4-citation.ris")
-(define-syntax test-ref
-  (syntax-rules ()
-    ((_ field vals ...)
-     (test field (list vals ...)
-           (flexvector->list (mapping-ref file field))))))
-(test-ref "TY" "JOUR")
-(test-ref "AU"
-          "Prudkovskiy, Vladimir S."
-          "Hu, Yiran"
-          "Zhang, Kaimin"
-          "Hu, Yue"
-          "Ji, Peixuan"
-          "Nunn, Grant"
-          "Zhao, Jian"
-          "Shi, Chenqian"
-          "Tejeda, Antonio"
-          "Wander, David"
-          "De Cecco, Alessandro"
-          "Winkelmann, Clemens B."
-          "Jiang, Yuxuan"
-          "Zhao, Tianhao"
-          "Wakabayashi, Katsunori"
-          "Jiang, Zhigang"
-          "Ma, Lei"
-          "Berger, Claire"
-          "de Heer, Walt A.")
-(test-ref "PY" "2022")
-(test-ref "DA" "2022/12/19")
-(test-ref "TI"
-          "An epitaxial graphene platform for zero-energy edge state nanoelectronics")
-(test-ref "JO" "Nature Communications")
-(test-ref "SP" "7814")
-(test-ref "VL" "13")
-(test-ref "IS" "1")
-(test-ref "AB"
-          "Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.")
-(test-ref "SN" "2041-1723")
-(test-ref "UR" "https://doi.org/10.1038/s41467-022-34369-4")
-(test-ref "DO" "10.1038/s41467-022-34369-4")
-(test-ref "ID" "Prudkovskiy2022")
-(test-end "10.1038_s41467-022-34369-4-citation.ris")