chicken egg

2 files changed, 97 insertions, 0 deletions

diff --git a/tests/10.1038_s41467-022-34369-4-citation.ris b/tests/10.1038_s41467-022-34369-4-citation.ris
new file mode 100644
index 0000000..37ef355
--- /dev/null
+++ b/tests/10.1038_s41467-022-34369-4-citation.ris
@@ -0,0 +1,33 @@
+TY  - JOUR
+AU  - Prudkovskiy, Vladimir S.
+AU  - Hu, Yiran
+AU  - Zhang, Kaimin
+AU  - Hu, Yue
+AU  - Ji, Peixuan
+AU  - Nunn, Grant
+AU  - Zhao, Jian
+AU  - Shi, Chenqian
+AU  - Tejeda, Antonio
+AU  - Wander, David
+AU  - De Cecco, Alessandro
+AU  - Winkelmann, Clemens B.
+AU  - Jiang, Yuxuan
+AU  - Zhao, Tianhao
+AU  - Wakabayashi, Katsunori
+AU  - Jiang, Zhigang
+AU  - Ma, Lei
+AU  - Berger, Claire
+AU  - de Heer, Walt A.
+PY  - 2022
+DA  - 2022/12/19
+TI  - An epitaxial graphene platform for zero-energy edge state nanoelectronics
+JO  - Nature Communications
+SP  - 7814
+VL  - 13
+IS  - 1
+AB  - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
+SN  - 2041-1723
+UR  - https://doi.org/10.1038/s41467-022-34369-4
+DO  - 10.1038/s41467-022-34369-4
+ID  - Prudkovskiy2022
+ER  - 
diff --git a/tests/run.scm b/tests/run.scm
new file mode 100644
index 0000000..1d80564
--- /dev/null
+++ b/tests/run.scm
@@ -0,0 +1,64 @@
+#| Copyright 2024 Peter McGoron
+ |
+ | Licensed under the Apache License, Version 2.0 (the "License");
+ |
+ | you may not use this file except in compliance with the License.
+ | You may obtain a copy of the License at
+ |
+ |     http://www.apache.org/licenses/LICENSE-2.0
+ |
+ | Unless required by applicable law or agreed to in writing, software
+ | distributed under the License is distributed on an "AS IS" BASIS,
+ | WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.
+ | See the License for the specific language governing permissions and
+ | limitations under the License.
+ |#
+
+(import r7rs (mcgoron ris parse) test (srfi 146) (srfi 214))
+
+(define file
+  (call-with-input-file "10.1038_s41467-022-34369-4-citation.ris" ris->mapping))
+
+(test-begin "10.1038_s41467-022-34369-4-citation.ris")
+(define-syntax test-ref
+  (syntax-rules ()
+    ((_ field vals ...)
+     (test field (list vals ...)
+           (flexvector->list (mapping-ref file field))))))
+(test-ref "TY" "JOUR")
+(test-ref "AU"
+          "Prudkovskiy, Vladimir S."
+          "Hu, Yiran"
+          "Zhang, Kaimin"
+          "Hu, Yue"
+          "Ji, Peixuan"
+          "Nunn, Grant"
+          "Zhao, Jian"
+          "Shi, Chenqian"
+          "Tejeda, Antonio"
+          "Wander, David"
+          "De Cecco, Alessandro"
+          "Winkelmann, Clemens B."
+          "Jiang, Yuxuan"
+          "Zhao, Tianhao"
+          "Wakabayashi, Katsunori"
+          "Jiang, Zhigang"
+          "Ma, Lei"
+          "Berger, Claire"
+          "de Heer, Walt A.")
+(test-ref "PY" "2022")
+(test-ref "DA" "2022/12/19")
+(test-ref "TI"
+          "An epitaxial graphene platform for zero-energy edge state nanoelectronics")
+(test-ref "JO" "Nature Communications")
+(test-ref "SP" "7814")
+(test-ref "VL" "13")
+(test-ref "IS" "1")
+(test-ref "AB"
+          "Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.")
+(test-ref "SN" "2041-1723")
+(test-ref "UR" "https://doi.org/10.1038/s41467-022-34369-4")
+(test-ref "DO" "10.1038/s41467-022-34369-4")
+(test-ref "ID" "Prudkovskiy2022")
+(test-end "10.1038_s41467-022-34369-4-citation.ris")
+(test-exit)