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#| Copyright 2024 Peter McGoron
|
| Licensed under the Apache License, Version 2.0 (the "License");
|
| you may not use this file except in compliance with the License.
| You may obtain a copy of the License at
|
| http://www.apache.org/licenses/LICENSE-2.0
|
| Unless required by applicable law or agreed to in writing, software
| distributed under the License is distributed on an "AS IS" BASIS,
| WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, either express or implied.
| See the License for the specific language governing permissions and
| limitations under the License.
|#
(import r7rs)
(load "../mcgoron.ris.sld")
(import (mcgoron ris) test (srfi 146) (srfi 214))
(define file
(call-with-input-file "10.1038_s41467-022-34369-4-citation.ris" ris->mapping))
(test-begin "10.1038_s41467-022-34369-4-citation.ris")
(define-syntax test-ref
(syntax-rules ()
((_ field vals ...)
(test field (list vals ...)
(flexvector->list (mapping-ref file field))))))
(test-ref "TY" "JOUR")
(test-ref "AU"
"Prudkovskiy, Vladimir S."
"Hu, Yiran"
"Zhang, Kaimin"
"Hu, Yue"
"Ji, Peixuan"
"Nunn, Grant"
"Zhao, Jian"
"Shi, Chenqian"
"Tejeda, Antonio"
"Wander, David"
"De Cecco, Alessandro"
"Winkelmann, Clemens B."
"Jiang, Yuxuan"
"Zhao, Tianhao"
"Wakabayashi, Katsunori"
"Jiang, Zhigang"
"Ma, Lei"
"Berger, Claire"
"de Heer, Walt A.")
(test-ref "PY" "2022")
(test-ref "DA" "2022/12/19")
(test-ref "TI"
"An epitaxial graphene platform for zero-energy edge state nanoelectronics")
(test-ref "JO" "Nature Communications")
(test-ref "SP" "7814")
(test-ref "VL" "13")
(test-ref "IS" "1")
(test-ref "AB"
"Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.")
(test-ref "SN" "2041-1723")
(test-ref "UR" "https://doi.org/10.1038/s41467-022-34369-4")
(test-ref "DO" "10.1038/s41467-022-34369-4")
(test-ref "ID" "Prudkovskiy2022")
(test-end "10.1038_s41467-022-34369-4-citation.ris")
|
