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+TY  - JOUR
+AU  - Prudkovskiy, Vladimir S.
+AU  - Hu, Yiran
+AU  - Zhang, Kaimin
+AU  - Hu, Yue
+AU  - Ji, Peixuan
+AU  - Nunn, Grant
+AU  - Zhao, Jian
+AU  - Shi, Chenqian
+AU  - Tejeda, Antonio
+AU  - Wander, David
+AU  - De Cecco, Alessandro
+AU  - Winkelmann, Clemens B.
+AU  - Jiang, Yuxuan
+AU  - Zhao, Tianhao
+AU  - Wakabayashi, Katsunori
+AU  - Jiang, Zhigang
+AU  - Ma, Lei
+AU  - Berger, Claire
+AU  - de Heer, Walt A.
+PY  - 2022
+DA  - 2022/12/19
+TI  - An epitaxial graphene platform for zero-energy edge state nanoelectronics
+JO  - Nature Communications
+SP  - 7814
+VL  - 13
+IS  - 1
+AB  - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
+SN  - 2041-1723
+UR  - https://doi.org/10.1038/s41467-022-34369-4
+DO  - 10.1038/s41467-022-34369-4
+ID  - Prudkovskiy2022
+ER  -