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TY - JOUR
AU - Prudkovskiy, Vladimir S.
AU - Hu, Yiran
AU - Zhang, Kaimin
AU - Hu, Yue
AU - Ji, Peixuan
AU - Nunn, Grant
AU - Zhao, Jian
AU - Shi, Chenqian
AU - Tejeda, Antonio
AU - Wander, David
AU - De Cecco, Alessandro
AU - Winkelmann, Clemens B.
AU - Jiang, Yuxuan
AU - Zhao, Tianhao
AU - Wakabayashi, Katsunori
AU - Jiang, Zhigang
AU - Ma, Lei
AU - Berger, Claire
AU - de Heer, Walt A.
PY - 2022
DA - 2022/12/19
TI - An epitaxial graphene platform for zero-energy edge state nanoelectronics
JO - Nature Communications
SP - 7814
VL - 13
IS - 1
AB - Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
SN - 2041-1723
UR - https://doi.org/10.1038/s41467-022-34369-4
DO - 10.1038/s41467-022-34369-4
ID - Prudkovskiy2022
ER -
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